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* DC Current Gain -- hFE = 40 (Min) @ IC = 1.0 Adc * MJE371 is Complementary to NPN MJE521
(1) Pulse Test: Pulse Width
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data . . . designed for use in general-purpose amplifier and switching circuits. Recommended for use in 5 to 20 Watt audio amplifiers utilizing complementary symmetry circuitry.
Plastic Medium-Power PNP Silicon Transistors
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted)
THERMAL CHARACTERISTICS
MAXIMUM RATINGS
ON CHARACTERISTICS
OFF CHARACTERISTICS
REV 2
Thermal Resistance, Junction to Case
Operating and Storage Junction Temperature Range
Total Power Dissipation @ TC = 25_C Derate above 25_C
Base Current -- Continuous
Collector Current -- Continuous -- Peak
Emitter-Base Voltage
Collector-Base Voltage
Collector-Emitter Voltage
DC Current Gain (1) (IC = 1.0 Adc, VCE = 1.0 Vdc)
Emitter-Base Cutoff Current (VEB = 4.0 Vdc, IC = 0)
Collector-Base Cutoff Current (VCB = 40 Vdc, IE = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 100 mAdc, IB = 0)
v 300 s, Duty Cycle v 2.0%.
Characteristic
Characteristic
Rating
VCEO(sus)
Symbol
Symbol
Symbol
TJ, Tstg
VCEO
ICBO
IEBO
VCB
VEB
hFE
JC
PD
IC
IB
Min
40
40
--
--
- 65 to + 150
Value
3.12
Max
40 320
4 AMPERE POWER TRANSISTOR PNP SILICON 40 VOLTS 40 WATTS
2.0
4.0 8.0
4.0
40
40
MJE371
CASE 77-08 TO-225AA TYPE
Max
100
100
Order this document by MJE371/D
--
--
Watts mW/_C
_C/W
Adc
Adc
Unit
Unit
Unit
Vdc
Adc
Adc
Vdc
Vdc
Vdc
_C
--
1
MJE371
10 IC, COLLECTOR CURRENT (AMP) 5.0 3.0 2.0 1.0 0.5 0.3 0.2 0.1 2.0 TJ = 150C BONDING WIRE LIMIT SECOND BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C 1.0 ms 5.0 ms dc 100 s
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 1 is based on T J(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150_C. At high case temperatures, thermal limitations will reduce the power that can be handled to values less then the limitations imposed by second breakdown.
v
40 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
60
Figure 1. Active-Region Safe Operating Area
hFE , DC CURRENT GAIN, NORMALIZED
10 7.0 5.0 3.0 2.0
2.0 150C TJ = 25C VCE = 1.0 Vdc VOLTAGE (VOLTS) - 55C 1.6 TJ = 25C
1.2
1.0 0.7 0.5 0.3 0.2 0.1 0.01
0.8
VBE(sat) @ IC/IB = 10 VBE(on) @ VCE = 1.0 V
0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP)
0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 IC, COLLECTOR CURRENT (AMP)
2.0 3.0 4.0
2.0 3.0 4.0
Figure 2. DC Current Gain
Figure 3. "On" Voltage
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED)
1.0 0.7 0.5 0.3 0.2
D = 0.5 0.2 0.1 JC(t) = r(t) JC JC = 3.12C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) JC(t) P(pk)
0.1 0.07 0.05 0.03 0.02
0.05 0.02 0.01 SINGLE PULSE
t1
t2
DUTY CYCLE, D = t1/t2
0.01 0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms)
20
50
100
200
500
1000
Figure 4. Thermal Response
2
Motorola Bipolar Power Transistor Device Data
MJE371
PACKAGE DIMENSIONS
-B- U Q
F M
C
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K M Q R S U V INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 ---
-A-
123
H
K
V G S D 2 PL 0.25 (0.010)
M
J R 0.25 (0.010) A
M
A
M
M
B
M
B
M
STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE
CASE 77-08 TO-225AA TYPE ISSUE V
Motorola Bipolar Power Transistor Device Data
3
MJE371
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com
JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298
4
Motorola Bipolar Power Transistor Device Data
*MJE371/D*
MJE371/D


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